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Lead-free Green
HBDM60V600W
COMPLEX TRANSISTOR ARRAY FOR BIPOLAR TRANSISTOR HALF H-BRIDGE MOTOR/ACTUATOR DRIVER
NEW PRODUCT
Features
* * *
Epitaxial Planar Die Construction Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2)
6 5 4
Mechanical Data
* * * * * * * *
Case: SOT-363 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminal Connections: See Fig. 2 Terminals: Finish 3/4 Matte Tin Finish annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Marking & Type Code Information: See Page 7 Ordering Information: See Page 7 Weight: 0.016 grams (approximate)
Q1 MMBT2907A
1 2 3
Fig. 1: SOT-363
CQ1
EQ1
EQ2
Q2 MMBTA06
BQ1
BQ2
CQ2
Sub-Component P/N MMBT2907A_DIE MMBTA06_DIE
Reference Q1 Q2
Device Type PNP Transistor NPN Transistor
Figure 2 2
Fig. 2: Schematic & Pin Configuration
Maximum Ratings: Total Device
Characteristic Power Dissipation (Note 3)
@ TA = 25C unless otherwise specified Symbol Pd RqJA VEBO Value 200 625 -55 to +150 Unit mW C/W C
Thermal Resistance, Junction to Ambient Air (Note 3) Operating and Storage Junction Temperature Range
Maximum Ratings: Sub-Component Devices
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous (Note 3)
Notes:
@ TA = 25C unless otherwise specified Q1-PNP Transistor (MMBT2907A) -60 -60 -5.5 -600 Q2-NPN Transistor (MMBTA06) 80 65 6 500 Unit V V V mA
Symbol VCBO VCEO VEBO IC
1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on page 8 or on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
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NEW PRODUCT
Electrical Characteristics @ TA = 25C unless otherwise specified PNP (MMBT2907A) Transistor (Q1):
Characteristic OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 4) 100 100 100 100 50 3/4 3/4 3/4 3/4 3/4 300 3/4 -0.3 -0.5 -0.95 -01.3 3/4 3/4 3/4 3/4 3/4 V V IC = -100mA, VCE = -10V IC = -1.0mA, VCE = -10V IC = -10mA, VCE = -10V IC = -150mA, VCE = -10V IC = -500mA, VCE = -10V IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEX IBL -60 -60 -5.5 3/4 3/4 3/4 3/4 3/4 3/4 -10 -50 -50 V V V nA nA nA IC = -10mA, IE = 0 IC = -10mA, IB = 0 IE = -10mA, IC = 0 VCB = -50V, IE = 0 VCE = -30V, VEB(OFF) = -0.5V VCE = -30V, VEB(OFF) = -0.5V Symbol Min Max Unit Test Condition
DC Current Gain
hFE
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product SWITCHING CHARACTERISTICS Turn-On Time Delay Time Rise Time Turn-Off Time Storage Time Fall Time
VCE(SAT) VBE(SAT)
fT
100
3/4
MHz
VCE = 2.0V, IC = 10mA, f = 100MHz
ton td tr toff ts tr
3/4 3/4 3/4 3/4 3/4 3/4
45 10 40 100 80 30
ns ns ns ns ns ns
3/4 VCE = -30V, IC = -150mA, IB1 = IB2 = -15mA 3/4 VCC = -6.0V, IC = -150mA, IB1 = IB2 = -15mA
@ TA = 25C unless otherwise specified Electrical Characteristics NPN (MMBTA06) Transistor (Q2): Characteristic OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Collector Cutoff Current Collector-Emitter Cutoff Current, IO(OFF) Emitter-Base Cutoff Current ON CHARACTERISTICS (Note 4) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Turn-on Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product
Notes:
Symbol
Min
Typ
Max
Unit
Test Condition
V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICES ICEO IEBO
80 65 6 3/4 3/4 3/4 3/4
3/4 3/4 3/4 3/4 3/4 3/4 3/4
3/4 3/4 3/4 100 100 100 100
V V V nA nA nA nA
IC = 100mA, IE = 0 IC = 1mA, IB = 0 IE = 100mA, IC = 0 VCB = 80V, IE = 0 VCE = 90V, VBE = 0 VCE = 30V, IB = 0 VEB = 5V, IC = 0 VCE = 1V, IC = 10mA VCE = 1V, IC = 100mA IC = 100mA, IB = 10mA VCE = 1V, IC = 100mA IC = 100mA, IB = 5mA
hFE VCE(SAT) VBE(ON) VBE(SAT)
250 100 3/4 0.7 3/4
3/4 3/4 0.2 0.75 3/4
3/4 3/4 0.4 0.8 0.95
3/4 3/4 V V V
fT
100
3/4
3/4
MHz
VCE = 20V, IC = 10mA, f = 100MHz
4. Short duration pulse test used to minimize self-heating effect.
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HBDM60V600W
Typical Characteristics
@ Tamb = 25C unless otherwise specified
NEW PRODUCT
200
PD, POWER DISSIPATION (mW)
150
100
50
0 0 25 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (C) Fig. 3 Power Derating Curve
PNP (MMBT2907A) Transistor (Q1) Plots:
30 20 C, CAPACITANCE (pF)
Cibo
10
5.0
Cobo
1.0 -0.1
-1.0
-10
-30
REVERSE VOLTS (V) Fig. 4 Typical Capacitance
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HBDM60V600W
VCE COLLECTOR-EMITTER VOLTAGE (V)
1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001
IC = 1mA IC = 10mA IC = 100mA IC = 30mA IC = 300mA
NEW PRODUCT
0.01
0.1
1
10
100
IB, BASE CURRENT (mA) Fig. 5 Typical Collector Saturation Region
0.6 IC = 10 IB
1000 VCE = 5V TA = 150C
VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V)
0.5 0.4
hFE, DC CURRENT GAIN
100 TA = 25C TA = -50C
0.3
TA = 150C TA = 25C
0.2
10
0.1
TA = -50C
0 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 6 Collector Emitter Saturation Voltage vs. Collector Current
1.0 VBE(ON), BASE EMITTER VOLTAGE (V) 0.9 0.8 0.7 0.6 TA = 25C 0.5 0.4 0.3 0.2 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 8 Base Emitter Voltage vs. Collector Current TA = 150C TA = -50C
1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 7 DC Current Gain vs Collector Current
1000 fT, GAIN BANDWIDTH PRODUCT (MHz)
VCE = 5V
VCE = 5V
100
10
1 1 10 IC, COLLECTOR CURRENT (mA) Fig. 9 Gain Bandwidth Product vs. Collector Current 100
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HBDM60V600W
NPN (MMBTA06) Transistor (Q2) Plots:
10
NEW PRODUCT
ICBO, COLLECTOR-BASE CURRENT (nA)
VCB = 80V
1
0.1
0.01 25
50
75
100
125
TA, AMBIENT TEMPERATURE (C) Fig. 10 Typical Collector-Cutoff Current vs. Ambient Temperature
2.0
VCE, COLLECTOR EMITTER VOLTAGE (V)
1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001
IC = 30mA IC = 10mA
IC = 100mA IC = 1mA
0.01
0.1
1
10
100
IB, BASE CURRENT (mA) Fig. 11 Typical Collector Saturation Region
0.500 VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) 0.450 0.400 0.350 0.300 0.250 0.200 0.150 0.100 0.050 0 1 10 100 TA = -50C 1000 TA = 150C TA = 25C IC IB = 10
10000 VCE = 5V
hFE, DC CURRENT GAIN
1000
TA = 150C
100
TA = -50C
TA = 25C
10
1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 13 DC Current Gain vs Collector Current
IC, COLLECTOR CURRENT (mA) Fig. 12 Collector Emitter Saturation Voltage vs. Collector Current
DS30701 Rev. 2 - 2
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HBDM60V600W
1.0
1000
NEW PRODUCT
VBE(ON), BASE EMITTER VOLTAGE (V)
0.8 TA = -50C 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 14 Base Emitter Voltage vs Collector Current TA = 150C TA = 25C
fT, GAIN BANDWIDTH PRODUCT (MHz)
0.9
VCE = 5V
VCE = 5V
100
10
1 1 IC, COLLECTOR CURRENT (mA) Fig. 15 Gain Bandwidth Product vs Collector Current 10
Circuit Schematic along with Application Example:
9V-12V
HBDM60V600W
R1 EQ1
36
HBDM60V600W
MMBT2907A Q1 R3 BQ1 CQ1 Q3 Half H-Bridge R5 1k CQ2 M M B TA 0 6 Q2 BQ2 EQ2 D3 C2 D1 0
C1 D2 Q1
MMBT2907A
BQ1 CQ1
R4 Q4
Motor
Half H-Bridge CQ2 M M B TA 0 6 D4 Q2 BQ2 R8 1k
Forward
0
Reverse
Fig. 16
Note:
D1, D2, D3, D4: Switching Diodes (MMBD4448) Q3, Q4: NPN Transistors (MMBTA06)
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HBDM60V600W
NEW PRODUCT
Application Example Schematic: (with Package Pinouts)
9V-12V R1 36
U1 A1 NC C2 1 2 3 6 5 4 C1 NC
C1
R2 33k R3
A2 U2 BQ1 BQ2 1 2 3 6 5 4 CQ1 EQ1 EQ2 470 U3 EQ1 BQ2 1 CQ2 2 3
MMBD4448DW U4 BQ1 R4 470 BQ2 CQ2 1 2
6
CQ1 EQ1 C2
Motor
CQ2
CQ1 6 BQ1 5 EQ2 4
5
HBDM60V600W R5 C1 6 C2 5 C3 4 1k
INV5V0W
EQ2 3 4 HBDM60V600W
Q1 R6 1k
U5 A1 1 A2 2 A3 3
MMBD4448HTW
Reverse
Forward Control Input 5V/0V
Fig. 17
Ordering Information
Device
(Note 5) Packaging HB01 Shipping 3000/Tape & Reel
HBDM60V600W-7
Notes:
5. For Packaging Details, please go to page 8 or our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
HB01
Fig. 18 Date Code Key Year Code Month Code 2006 T Jan 1 Feb 2
HB01 = Product Type Marking Code YM = Date Code Marking Y = Year ex: T = 2006 M = Month ex: 9 = September
2007 U March 3
YM
2008 V Apr 4 May 5
2009 W Jun 6 Jul 7
2010 X Aug 8 Sep 9
2011 Y Oct O Nov N
2012 Z Dec D
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HBDM60V600W
Mechanical Details
NEW PRODUCT
SOT-363
A
Dim A B
BC
Min 0.10 1.15 2.00 0.30 1.80 3/4 0.90 0.25 0.10 0
Max 0.30 1.35 2.20 0.40 2.20 0.10 1.00 0.40 0.25 8
C D F
0.65 Nominal
G H K M
H J K L M a
J
D
F
L
All Dimensions in mm Fig. 19
Suggested Pad Layout: (Based on IPC-SM-782)
Figure 20 Dimensions Z G X Y C E
SOT-363* 2.5 1.3 0.42 0.6 1.9 0.65
Fig. 20
* Typical dimensions in mm
IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated.
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